Power Gating Techniques for Nano-Scale Devices

Srujan Tirupathi, Punjab Central University; Praveen Nimmagadda ,Punjab Central University

CMOS Nanoscale, Subthreshold Leakage, Stacking Transistors, Ground Bounce Noise

Power consumption is one of the major issues in CMOS technology. ITRS reports that leakage power may dominate the total power consumption. As technology feature size shrinks, the static power dominates the dynamic power consumption. This is known as the sub-threshold leakage which rises by creating a weak inversion channel between drain and source. Gate oxide thickness reduces as technology decreases which increases the sub-threshold leakage. Along with sub-threshold leakage there is an increase in ground bounce noise. This paper reviews different stacking techniques proposed in other papers. But each of those papers had certain trade-offs. So, a combination of the existing techniques has been implemented to have minimal sub-threshold leakage, ground bounce noise and propagation delay
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Paper ID: GRDJEV02I090031
Published in: Volume : 2, Issue : 9
Publication Date: 2017-09-01
Page(s): 19 - 26